Current-Voltage Characteristics of an AlGaAs/GaAs Heterostructure FET for High Gate Voltages

M. Hirano, Y. Takanashi, T. Sugeta

    研究成果: Article

    4 引用 (Scopus)

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    Drain-to-source current for high gate voltages in AlGaAs/GaAs heterostructure FET's (HFET's) is found to depend on the electron saturation velocity in the AlGaAs layer. A simple model, which takes into account the current through the undepleted channel in the AlGaAs layer as a function of the electron saturation velocity in AlGaAs, is proposed for describing I-V characteristics of HFET's for high gate voltages. Using the model, effective electron saturation velocity in AlxGa1_xAs for different Al content levels has been obtained from the analysis of the present experimental results; 7 × 106 cm/s for x = 0.24 and 3 × 106 cm/s for x = 0.3 at a 4 × 1017 cm-3 doping concentration.

    元の言語English
    ページ(範囲)496-499
    ページ数4
    ジャーナルIEEE Electron Device Letters
    5
    発行部数11
    DOI
    出版物ステータスPublished - 1984 11

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    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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