DC characteristics in high-quality AlGaN/AlN/GaN high-electron-mobility transistors grown on AIN/sapphire templates

Makoto Miyoshi, Atsushi Imanishi, Takashi Egawa, Hiroyasu Ishikawa, Kei Ichiro Asai, Tomohiko Shibata, Mitsuhiro Tanaka, Osamu Oda

研究成果: Article査読

26 被引用数 (Scopus)

抄録

High-crystal-quality Al0.26Ga0.74N/AlN/GaN structures with a very high mobility, such as over 2100cm2/(V s) with a two-dimensional-electron gas (2DEG) density of approximately 1 × 10 13/cm2, were grown on epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy and adopted for the fabrication of high-electron-mobility transistors (HEMTs). The fabricated devices showed good DC characteristics compared with those in conventional AlGaN/GaN HEMTs and in devices grown on sapphire substrates. Also, it was confirmed that further improvements in DC characteristics are achieved by applying recessed ohmic contacts to AlGaN/AlN/GaN HEMTs. A high extrinsic transconductance of approximately 220mS/mm and a high drain current density of over 1 A/mm with a threshold voltage of -4.08 V were obtained for 1,5-μm-gate-length recessed ohmic AlGaN/AlN/GaN HEMTs on AIN/sapphire templates. In addition, it was found that the gate leakage current of HEMTs can be suppressed by using epitaxial AIN/sapphire templates as substrates.

本文言語English
ページ(範囲)6490-6494
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
44
9 A
DOI
出版ステータスPublished - 2005 9 8
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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