Decay kinetics of the 4.4 eV photoluminescence associated with the two states of oxygen-deficient-type defect in amorphous SiO2

Hiroyuki Nishikawa, Eiki Watanabe, Daisuke Ito, Yoshimichi Ohki

研究成果: Article

146 引用 (Scopus)

抄録

We present the first observation of 4.4 eV photoluminescence (PL) decay in an oxygen-deficient-type silica excited with ultraviolet and vacuum ultraviolet photons from synchrotron radiation. The lifetime of the 4.4 eV PL is 4.2, 4.3, and 2.1 ns for the 5.0, 6.9, and 7.6 eV excitations, respectively, indicating the presence of multiple decay channels. This can be explained by an energy diagram involving the interconversion between two states of the oxygen-deficient-type defect.

元の言語English
ページ(範囲)2101-2104
ページ数4
ジャーナルPhysical Review Letters
72
発行部数13
出版物ステータスPublished - 1994
外部発表Yes

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photoluminescence
defects
kinetics
decay
oxygen
synchrotron radiation
diagrams
silicon dioxide
life (durability)
vacuum
photons
excitation
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

これを引用

Decay kinetics of the 4.4 eV photoluminescence associated with the two states of oxygen-deficient-type defect in amorphous SiO2. / Nishikawa, Hiroyuki; Watanabe, Eiki; Ito, Daisuke; Ohki, Yoshimichi.

:: Physical Review Letters, 巻 72, 番号 13, 1994, p. 2101-2104.

研究成果: Article

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