Decrease in slow current transients and current collapse in GaN-based FETs with a filed plate

A. Nakajima, K. Itagaki, K. Horio

研究成果: Conference contribution

1 引用 (Scopus)

抜粋

Two-dimensional transient analyses of AlGaN/GaN HEMTs and GaN MESFETs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of field plate affects buffer-related lag phenomena and current collapse. It is shown that in both FETs, the lag phenomena and current collapse could be reduced by introducing a field plate, because electron injection into the buffer layer is weakened by it, and trapping effects are reduced. The dependence on insulator-thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the current collapse and drain lag.

元の言語English
ホスト出版物のタイトル2008 European Microwave Integrated Circuit Conference, EuMIC 2008
ページ183-186
ページ数4
DOI
出版物ステータスPublished - 2008 12 1
イベント2008 European Microwave Integrated Circuit Conference, EuMIC 2008 - Amsterdam, Netherlands
継続期間: 2008 10 272008 10 31

出版物シリーズ

名前2008 European Microwave Integrated Circuit Conference, EuMIC 2008

Conference

Conference2008 European Microwave Integrated Circuit Conference, EuMIC 2008
Netherlands
Amsterdam
期間08/10/2708/10/31

    フィンガープリント

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Nakajima, A., Itagaki, K., & Horio, K. (2008). Decrease in slow current transients and current collapse in GaN-based FETs with a filed plate. : 2008 European Microwave Integrated Circuit Conference, EuMIC 2008 (pp. 183-186). [4772259] (2008 European Microwave Integrated Circuit Conference, EuMIC 2008). https://doi.org/10.1109/EMICC.2008.4772259