Deep-level effects on slow current transients and current collapse in GaN MESFETs

K. Yonemoto, K. Horio

研究成果: Conference contribution

抄録

Slow current transients in a GaN MESFET are analyzed by two-dimensional simulation in which deep levels in a semi-insulating buffer layer is considered. It is shown that when the drain voltage VD is raised abruptly, the drain current overshoots the steady-state value, and when VD is lowered, the drain current remains at a low value for some periods, showing drain lag behavior. This drain lag is shown to become a cause of so-called current collapse in the GaN MESFET.

本文言語English
ホスト出版物のタイトル2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
ページ267-270
ページ数4
DOI
出版ステータスPublished - 2005 12 1
イベント2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 - Beijing, China
継続期間: 2004 9 202004 9 25

出版物シリーズ

名前IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
2005

Conference

Conference2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
CountryChina
CityBeijing
Period04/9/2004/9/25

ASJC Scopus subject areas

  • Engineering(all)

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