Defects in thermal oxide studied by photoluminescence spectroscopy

Hiroyuki Nishikawa, James H. Stathis, E. Cartier

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Defects in as-grown thermal oxide were investigated by photoluminescence (PL) spectroscopy using synchrotron radiation as a light source. A PL band at 3.3 eV was observed under excitation at 5 eV for dry thermal oxide at room temperature. The PL band was also observed for forming-gas annealed oxide, in which the 3.3 eV PL was either enhanced by subsequent vacuum annealing or suppressed by hydrogen exposure. The PL measurements on oxynitride films show that effect of nitrogen incorporation on the 3.3 eV PL is less significant than that of hydrogen. Wide observability of the 3.3 eV PL band for oxide films prepared under various conditions indicates the intrinsic nature of the defects in thermal oxide introduced during thermal oxidation of silicon.

本文言語English
ページ(範囲)1219-1221
ページ数3
ジャーナルApplied Physics Letters
75
9
DOI
出版ステータスPublished - 1999 8 30
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

フィンガープリント 「Defects in thermal oxide studied by photoluminescence spectroscopy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル