Deformation Behavior of Pressurized Sintered Ag Nanoparticles in Discrete Type Power Semiconductor Device

Kiichi Nagata, Yoshiharu Kariya, Shoji Horie

研究成果: Conference contribution

抄録

Creep deformation analysis of die attach materials in a discrete type power semiconductor device under the operating conditions were performed. Pressurized sintered Ag nanoparticles are superior in creep deformation resistance at any period between on time and off time and \varepsilon-{\mathrm {in}} per cycle was about 60% of Sn-3.0Ag-0.5Cu alloy.

元の言語English
ホスト出版物のタイトルProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
出版者Institute of Electrical and Electronics Engineers Inc.
ページ数1
ISBN(電子版)9784904743072
DOI
出版物ステータスPublished - 2019 5 1
イベント6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
継続期間: 2019 5 212019 5 25

出版物シリーズ

名前Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Japan
Kanazawa, Ishikawa
期間19/5/2119/5/25

Fingerprint

Creep
Nanoparticles
Power semiconductor devices

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

これを引用

Nagata, K., Kariya, Y., & Horie, S. (2019). Deformation Behavior of Pressurized Sintered Ag Nanoparticles in Discrete Type Power Semiconductor Device. : Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 [8735247] (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2019.8735247

Deformation Behavior of Pressurized Sintered Ag Nanoparticles in Discrete Type Power Semiconductor Device. / Nagata, Kiichi; Kariya, Yoshiharu; Horie, Shoji.

Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8735247 (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).

研究成果: Conference contribution

Nagata, K, Kariya, Y & Horie, S 2019, Deformation Behavior of Pressurized Sintered Ag Nanoparticles in Discrete Type Power Semiconductor Device. : Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019., 8735247, Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Institute of Electrical and Electronics Engineers Inc., 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Kanazawa, Ishikawa, Japan, 19/5/21. https://doi.org/10.23919/LTB-3D.2019.8735247
Nagata K, Kariya Y, Horie S. Deformation Behavior of Pressurized Sintered Ag Nanoparticles in Discrete Type Power Semiconductor Device. : Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8735247. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). https://doi.org/10.23919/LTB-3D.2019.8735247
Nagata, Kiichi ; Kariya, Yoshiharu ; Horie, Shoji. / Deformation Behavior of Pressurized Sintered Ag Nanoparticles in Discrete Type Power Semiconductor Device. Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).
@inproceedings{9cd920758e3d40c6be4d1c1cc7bce78a,
title = "Deformation Behavior of Pressurized Sintered Ag Nanoparticles in Discrete Type Power Semiconductor Device",
abstract = "Creep deformation analysis of die attach materials in a discrete type power semiconductor device under the operating conditions were performed. Pressurized sintered Ag nanoparticles are superior in creep deformation resistance at any period between on time and off time and \varepsilon-{\mathrm {in}} per cycle was about 60{\%} of Sn-3.0Ag-0.5Cu alloy.",
author = "Kiichi Nagata and Yoshiharu Kariya and Shoji Horie",
year = "2019",
month = "5",
day = "1",
doi = "10.23919/LTB-3D.2019.8735247",
language = "English",
series = "Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019",

}

TY - GEN

T1 - Deformation Behavior of Pressurized Sintered Ag Nanoparticles in Discrete Type Power Semiconductor Device

AU - Nagata, Kiichi

AU - Kariya, Yoshiharu

AU - Horie, Shoji

PY - 2019/5/1

Y1 - 2019/5/1

N2 - Creep deformation analysis of die attach materials in a discrete type power semiconductor device under the operating conditions were performed. Pressurized sintered Ag nanoparticles are superior in creep deformation resistance at any period between on time and off time and \varepsilon-{\mathrm {in}} per cycle was about 60% of Sn-3.0Ag-0.5Cu alloy.

AB - Creep deformation analysis of die attach materials in a discrete type power semiconductor device under the operating conditions were performed. Pressurized sintered Ag nanoparticles are superior in creep deformation resistance at any period between on time and off time and \varepsilon-{\mathrm {in}} per cycle was about 60% of Sn-3.0Ag-0.5Cu alloy.

UR - http://www.scopus.com/inward/record.url?scp=85068355112&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85068355112&partnerID=8YFLogxK

U2 - 10.23919/LTB-3D.2019.8735247

DO - 10.23919/LTB-3D.2019.8735247

M3 - Conference contribution

AN - SCOPUS:85068355112

T3 - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

BT - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

PB - Institute of Electrical and Electronics Engineers Inc.

ER -