A Cu/HSQ damascene structure can be achieved by a new HSQ patterning technology using a TiN mask and post-CMP cleaning with electrolytic ionized ultra-pure cathode water. A Cu/HSQ structure with capacitance 17% lower than that of HSQ patterned by a conventional photo-resist-mask process was successfully fabricated with a sufficiently small number of post-Cu-CMP particles, only 30% of that with conventional post-Cu-CMP cleaning.
|ジャーナル||Technical Digest - International Electron Devices Meeting, IEDM|
|出版ステータス||Published - 1997 12 1|
|イベント||1997 International Electron Devices Meeting - Washington, DC, USA|
継続期間: 1997 12 7 → 1997 12 10
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