Degradation of InGaN/AlGaN LED on sapphire substrate grown by MOCVD

T. Egawa, Hiroyasu Ishikawa, T. Jimbo, M. Umeno

研究成果: Conference contribution

3 引用 (Scopus)

抄録

We report an optical degradation of an InGaN/AlGaN double-heterostructure light-emitting diode (LED) on a sapphire substrate grown by metallorganic chemical vapor deposition. The InGaN/AlGaN LED exhibited an optical output power of 0.17 mW, external quantum efficiency of 0.2 %, and the peak emitting spectrum at 437 nm with full width at half-maximum of 63 nm under 30 mA dc operation at 300 K. The InGaN/AlGaN LED showed the optical degradation under high injected current density. Electroluminescence, electron-beam induced current and cathodoluminescence observations show that the degraded InGaN/AlGaN LED exhibits formation and propagation of dark spots and a crescent-shaped dark patch, which act as nonradiative recombination centers. The values of degradation rate under injected current density of 0.1 kA/cm 2 were determined to be 1.1 × 10 -3, 1.9 × 10 -3 and 3.9 × 10 -3 h -1 at ambient temperatures of 30, 50 and 80°C, respectively. The activation energy of degradation was also determined to be 0.23 eV.

元の言語English
ホスト出版物のタイトルMaterials Research Society Symposium - Proceedings
編集者F.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar
出版者Materials Research Society
ページ1191-1196
ページ数6
449
出版物ステータスPublished - 1997
外部発表Yes
イベントProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
継続期間: 1996 12 21996 12 6

Other

OtherProceedings of the 1996 MRS Fall Symposium
Boston, MA, USA
期間96/12/296/12/6

Fingerprint

Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
Light emitting diodes
Degradation
Substrates
Current density
Cathodoluminescence
Induced currents
Electroluminescence
Full width at half maximum
Quantum efficiency
Heterojunctions
Electron beams
Activation energy
aluminum gallium nitride
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

これを引用

Egawa, T., Ishikawa, H., Jimbo, T., & Umeno, M. (1997). Degradation of InGaN/AlGaN LED on sapphire substrate grown by MOCVD. : F. A. Ponce, T. D. Moustakas, I. Akasaki, & B. A. Monemar (版), Materials Research Society Symposium - Proceedings (巻 449, pp. 1191-1196). Materials Research Society.

Degradation of InGaN/AlGaN LED on sapphire substrate grown by MOCVD. / Egawa, T.; Ishikawa, Hiroyasu; Jimbo, T.; Umeno, M.

Materials Research Society Symposium - Proceedings. 版 / F.A. Ponce; T.D. Moustakas; I. Akasaki; B.A. Monemar. 巻 449 Materials Research Society, 1997. p. 1191-1196.

研究成果: Conference contribution

Egawa, T, Ishikawa, H, Jimbo, T & Umeno, M 1997, Degradation of InGaN/AlGaN LED on sapphire substrate grown by MOCVD. : FA Ponce, TD Moustakas, I Akasaki & BA Monemar (版), Materials Research Society Symposium - Proceedings. 巻. 449, Materials Research Society, pp. 1191-1196, Proceedings of the 1996 MRS Fall Symposium, Boston, MA, USA, 96/12/2.
Egawa T, Ishikawa H, Jimbo T, Umeno M. Degradation of InGaN/AlGaN LED on sapphire substrate grown by MOCVD. : Ponce FA, Moustakas TD, Akasaki I, Monemar BA, 編集者, Materials Research Society Symposium - Proceedings. 巻 449. Materials Research Society. 1997. p. 1191-1196
Egawa, T. ; Ishikawa, Hiroyasu ; Jimbo, T. ; Umeno, M. / Degradation of InGaN/AlGaN LED on sapphire substrate grown by MOCVD. Materials Research Society Symposium - Proceedings. 編集者 / F.A. Ponce ; T.D. Moustakas ; I. Akasaki ; B.A. Monemar. 巻 449 Materials Research Society, 1997. pp. 1191-1196
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abstract = "We report an optical degradation of an InGaN/AlGaN double-heterostructure light-emitting diode (LED) on a sapphire substrate grown by metallorganic chemical vapor deposition. The InGaN/AlGaN LED exhibited an optical output power of 0.17 mW, external quantum efficiency of 0.2 {\%}, and the peak emitting spectrum at 437 nm with full width at half-maximum of 63 nm under 30 mA dc operation at 300 K. The InGaN/AlGaN LED showed the optical degradation under high injected current density. Electroluminescence, electron-beam induced current and cathodoluminescence observations show that the degraded InGaN/AlGaN LED exhibits formation and propagation of dark spots and a crescent-shaped dark patch, which act as nonradiative recombination centers. The values of degradation rate under injected current density of 0.1 kA/cm 2 were determined to be 1.1 × 10 -3, 1.9 × 10 -3 and 3.9 × 10 -3 h -1 at ambient temperatures of 30, 50 and 80°C, respectively. The activation energy of degradation was also determined to be 0.23 eV.",
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AU - Umeno, M.

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N2 - We report an optical degradation of an InGaN/AlGaN double-heterostructure light-emitting diode (LED) on a sapphire substrate grown by metallorganic chemical vapor deposition. The InGaN/AlGaN LED exhibited an optical output power of 0.17 mW, external quantum efficiency of 0.2 %, and the peak emitting spectrum at 437 nm with full width at half-maximum of 63 nm under 30 mA dc operation at 300 K. The InGaN/AlGaN LED showed the optical degradation under high injected current density. Electroluminescence, electron-beam induced current and cathodoluminescence observations show that the degraded InGaN/AlGaN LED exhibits formation and propagation of dark spots and a crescent-shaped dark patch, which act as nonradiative recombination centers. The values of degradation rate under injected current density of 0.1 kA/cm 2 were determined to be 1.1 × 10 -3, 1.9 × 10 -3 and 3.9 × 10 -3 h -1 at ambient temperatures of 30, 50 and 80°C, respectively. The activation energy of degradation was also determined to be 0.23 eV.

AB - We report an optical degradation of an InGaN/AlGaN double-heterostructure light-emitting diode (LED) on a sapphire substrate grown by metallorganic chemical vapor deposition. The InGaN/AlGaN LED exhibited an optical output power of 0.17 mW, external quantum efficiency of 0.2 %, and the peak emitting spectrum at 437 nm with full width at half-maximum of 63 nm under 30 mA dc operation at 300 K. The InGaN/AlGaN LED showed the optical degradation under high injected current density. Electroluminescence, electron-beam induced current and cathodoluminescence observations show that the degraded InGaN/AlGaN LED exhibits formation and propagation of dark spots and a crescent-shaped dark patch, which act as nonradiative recombination centers. The values of degradation rate under injected current density of 0.1 kA/cm 2 were determined to be 1.1 × 10 -3, 1.9 × 10 -3 and 3.9 × 10 -3 h -1 at ambient temperatures of 30, 50 and 80°C, respectively. The activation energy of degradation was also determined to be 0.23 eV.

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