Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition

T. Egawa, H. Ohmura, H. Ishikawa, T. Jimbo

研究成果: Article

35 引用 (Scopus)

抜粋

Structural, electrical, and optical properties of an InGaN-based light-emitting diode (LED) on an AlN/sapphire template have been studied and compared with the conventional LED properties on a sapphire substrate. In comparison to the LED on sapphire, the LED on AlN/sapphire template has shown better electrical and optical characteristics, which are due to a low threading dislocation density, high resistive, and thermal conductive AlN layer. An additional advantage is to grow a high-quality LED structure on an AlN/sapphire template without using low-temperature-grown GaN or an AlN buffer layer.

元の言語English
ページ(範囲)292-294
ページ数3
ジャーナルApplied Physics Letters
81
発行部数2
DOI
出版物ステータスPublished - 2002 7 8

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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