Demonstration of undoped quaternary AlInGaNGaN heterostructure field-effect transistor on sapphire substrate

Y. Liu, H. Jiang, S. Arulkumaran, T. Egawa, B. Zhang, H. Ishikawa

研究成果: Article査読

48 被引用数 (Scopus)

抄録

Undoped AlInGaNGaN heterostructure field-effect transistors (HFETs) have been demonstrated on sapphire substrate. The maximum drain current of 758 mAmm and extrinsic transconductance of 123 mSmm were obtained from the device with 2 μm gate length and 15 μm gate width. Such performance was comparable to that of a conventional modulation-doped (MOD) AlGaNGaN HFET fabricated at same the condition. In spite of the high-density two-dimentional electron gas formed at the heterointerface, the AlInGaNGaN HFET structure showed relatively low Hall mobility (689 cm2 V s at 300 K), which was due to the high concentration background doping in the undoped AlInGaN barrier region. Encouragingly, both the gate leakage current and drain current collapse showed lower values than that of the MOD-AlGaNGaN HFET, which implied the potential application of quaternary AlInGaN to high-power and high-frequency devices.

本文言語English
論文番号223510
ページ(範囲)1-3
ページ数3
ジャーナルApplied Physics Letters
86
22
DOI
出版ステータスPublished - 2005
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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