Demonstration of undoped quaternary AlInGaNGaN heterostructure field-effect transistor on sapphire substrate

Y. Liu, H. Jiang, S. Arulkumaran, T. Egawa, B. Zhang, H. Ishikawa

研究成果: Article

46 引用 (Scopus)

抜粋

Undoped AlInGaNGaN heterostructure field-effect transistors (HFETs) have been demonstrated on sapphire substrate. The maximum drain current of 758 mAmm and extrinsic transconductance of 123 mSmm were obtained from the device with 2 μm gate length and 15 μm gate width. Such performance was comparable to that of a conventional modulation-doped (MOD) AlGaNGaN HFET fabricated at same the condition. In spite of the high-density two-dimentional electron gas formed at the heterointerface, the AlInGaNGaN HFET structure showed relatively low Hall mobility (689 cm2 V s at 300 K), which was due to the high concentration background doping in the undoped AlInGaN barrier region. Encouragingly, both the gate leakage current and drain current collapse showed lower values than that of the MOD-AlGaNGaN HFET, which implied the potential application of quaternary AlInGaN to high-power and high-frequency devices.

元の言語English
記事番号223510
ページ(範囲)1-3
ページ数3
ジャーナルApplied Physics Letters
86
発行部数22
DOI
出版物ステータスPublished - 2005 7 4
外部発表Yes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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