Depth profiles of the Fermi level at an amorphous-carbon nitride/SiO2/n-type-Si heterojunction interface obtained by Kelvin probe force microscopy

Takahiro Ishizaki, Nagahiro Saito, Riichiro Ohta, Osamu Takai

研究成果: Article査読

1 被引用数 (Scopus)

抄録

To explore the work function of a typical amorphous-CN film containing a nitrogen concentration of 23.5 at.%, surface potential images were acquired using Kelvin probe force microscopy. Based on the Fermi level of the n-type Si and the contact potential difference between the amorphous-CN film and the n-Si substrate, the work function of the amorphous-CN film was estimated to be 5.2 ± 0.2 eV below its vacuum level. Using the surface potential depth profile for an etched amorphous-CN film, energy diagrams of the amorphous-CN/SiO2/n-Si interface were constructed based on the positional relationship of the Fermi level. These band diagrams showed that band bending occurred at the amorphous-CN/SiO2/n-Si interface despite the Fermi level pinning effect of surface trapping due to the SiO2 insulator layer.

本文言語English
ページ(範囲)1378-1382
ページ数5
ジャーナルDiamond and Related Materials
15
9
DOI
出版ステータスPublished - 2006 9
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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