Design considerations for millimeter-wave power HBT's based on gain performance analysis

ShiN'Ichi Tanaka, Yasushi Amamiya, Seiichi Murakami, Hidenori Shimawaki, Norio Goto, Yoichiro Takayama, Kazuhiko Honjo

研究成果: Article

13 引用 (Scopus)

抄録

Critical design issues involved in optimizing milli-meter-wave power HBT's are described. Gain analysis of common-emitter (CE) and common-base (CB) HBT's is performed using analytical formulas derived based on a practical HBT model. While CB HBT's have superior maximum-gain at very high frequencies, their frequency limit is found to be determined by the carrier transit time delay. Thus, to fully exploit the potential gain in a CB HBT, it is essential to maintain a high FT even at high collector voltages. The advantage of using CB HBT's in a multifingered device geometry is also discussed. Unlike CE HBT's, CB HBT's are capable of maintaining a high gain even if the device size is scaled up by increasing the number of emitter-fingers. Moreover, it is found that reducing the wire parasitic capacitance allows emitter ballasting resistance to be used without affecting the gain. Fabrication of HBT's based on these design considerations led to excellent power performance in a CB unit-cell HBT at 25-26 GHz, featuring output power of 740 m W and power-added efficiency of 42%.

元の言語English
ページ(範囲)36-44
ページ数9
ジャーナルIEEE Transactions on Electron Devices
45
発行部数1
DOI
出版物ステータスPublished - 1998
外部発表Yes

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Wave power
Heterojunction bipolar transistors
Millimeter waves
millimeter waves
emitters
very high frequencies
power efficiency
transit time
high gain
accumulators
time lag
capacitance
wire
fabrication
output
electric potential
geometry
cells
Time delay
Capacitance

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

これを引用

Design considerations for millimeter-wave power HBT's based on gain performance analysis. / Tanaka, ShiN'Ichi; Amamiya, Yasushi; Murakami, Seiichi; Shimawaki, Hidenori; Goto, Norio; Takayama, Yoichiro; Honjo, Kazuhiko.

:: IEEE Transactions on Electron Devices, 巻 45, 番号 1, 1998, p. 36-44.

研究成果: Article

Tanaka, SI, Amamiya, Y, Murakami, S, Shimawaki, H, Goto, N, Takayama, Y & Honjo, K 1998, 'Design considerations for millimeter-wave power HBT's based on gain performance analysis', IEEE Transactions on Electron Devices, 巻. 45, 番号 1, pp. 36-44. https://doi.org/10.1109/16.658809
Tanaka, ShiN'Ichi ; Amamiya, Yasushi ; Murakami, Seiichi ; Shimawaki, Hidenori ; Goto, Norio ; Takayama, Yoichiro ; Honjo, Kazuhiko. / Design considerations for millimeter-wave power HBT's based on gain performance analysis. :: IEEE Transactions on Electron Devices. 1998 ; 巻 45, 番号 1. pp. 36-44.
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