Development of micromachining technology in ion microbeam system at TIARA, JAEA

T. Kamiya, H. Nishikawa, T. Satoh, J. Haga, M. Oikawa, Y. Ishii, T. Ohkubo, N. Uchiya, Y. Furuta

研究成果: Article

4 引用 (Scopus)

抜粋

An ion-beam-lithography technique has been progressed in the microbeam systems at Japan Atomic Energy Agency (JAEA) Takasaki. In order to obtain a high-precision measure for microbeam size estimation with a high precision, we applied this technique combined with the electroplating process to make a Ni relief pattern as a resolution standard used in secondary electron imaging. As a result, the smallest beam size could be recorded. The scattering of ions in the materials influenced the spatial resolution and this is also discussed.

元の言語English
ページ(範囲)488-491
ページ数4
ジャーナルApplied Radiation and Isotopes
67
発行部数3
DOI
出版物ステータスPublished - 2009 3 1

    フィンガープリント

ASJC Scopus subject areas

  • Radiation

これを引用

Kamiya, T., Nishikawa, H., Satoh, T., Haga, J., Oikawa, M., Ishii, Y., Ohkubo, T., Uchiya, N., & Furuta, Y. (2009). Development of micromachining technology in ion microbeam system at TIARA, JAEA. Applied Radiation and Isotopes, 67(3), 488-491. https://doi.org/10.1016/j.apradiso.2008.06.021