Development of Sputter Epitaxy Technique of Pure-Perovskite (001)/(100)-Oriented Sm-Doped Pb(Mg1/3, Nb2/3)O3-PbTiO3on Si

Xuanmeng Qi, Shinya Yoshida, Shuji Tanaka

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We have developed a unique sputter deposition technique for a pure-perovskite (001)/(100)-oriented samarium-doped Pb(Mg1/3, Nb2/3)O3-PbTiO3 (Sm-PMN-PT) epitaxial thin film on Si as a future piezoelectric transducer thin film in microelectromechanical systems (MEMSs). This technique bases on the use of a 'Pb(Zr,Ti)O3 (PZT)-based seed layer' and 'separate sputter deposition.' Undesired orientations and phases of such a relaxor-based ferroelectric are usually generated during the sputter deposition. This technique was demonstrated to provide preferential (001)/(100) orientation and pure-perovskite phase to the monocrystalline thin film. The fabricated film had excellent homogeneousness of the content distribution. Considering a practical thickness, a 2- μ m-thick monocrystalline thin film was grown on an Si substrate with this technique. Then, the piezoelectricity |e31,f| of the Sm-PMN-PT/PZT stacked film was evaluated through an actuation test of the unimorph cantilever. As a result, it measured 16-17 C/m2, which is almost comparable with intrinsic PZT polycrystalline thin films with high |e31,f| values. Considering that the actuation voltage was divided into Sm-PMN-PT and PZT layers, the inherent piezoelectricity of the Sm-PMN-PT thin film is expected to be higher. Optimization of the phase in the film by tuning the composition ratio also will further improve the piezoelectricity. We believe that this achievement is a great step to discover a giant piezoelectricity relaxor-based thin film beyond PZT for MEMS.

本文言語English
論文番号9146943
ページ(範囲)2738-2744
ページ数7
ジャーナルIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
67
12
DOI
出版ステータスPublished - 2020 12月
外部発表はい

ASJC Scopus subject areas

  • 器械工学
  • 音響学および超音波学
  • 電子工学および電気工学

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