TY - JOUR
T1 - Development of the large area silicon PIN diode with 2 mm-thick depletion layer for hard X-ray detector (HXD) on-board ASTRO-E
AU - Sugizaki, M.
AU - Kubo, S.
AU - Murakami, T.
AU - Ota, N.
AU - Ozawa, H.
AU - Takahashi, T.
AU - Kaneda, H.
AU - Iyomoto, N.
AU - Kamae, T.
AU - Kokubun, M.
AU - Kubota, A.
AU - Makishima, K.
AU - Tamura, T.
AU - Tashiro, M.
AU - Koyama, K.
AU - Tsunemi, H.
PY - 1997/12/1
Y1 - 1997/12/1
N2 - ASTRO-E is the next Japanese X-ray satellite to be launched in the year of 2000. It carries three high-energy astrophysical experiments, including the Hard X-ray Detector (HXD) which is unique in covering the wide energy band from 10 keV to 700 keV with an extremely low background. The HXD is a compound-eye detector, employing 16 GSO/BGO well-type phoswich scintillation counters together with 64 silicon PIN detectors. The scintillation counters cover an energy range of 40-700 keV, while the PIN diodes fill the intermediate energy range from 10 keV to 70 keV with an energy resolution about 3 keV. In this paper, we report on the developments of the large area, thick silicon PIN diodes. In order to achieve a high quantum efficiency up to 70 keV with a high energy resolution, we utilize a double stack of silicon PIN diodes, each 20 × 20 mm2 in size and 2 mm thick. Signals from the two diodes are summed into a single output. Four of these stacks (or eight diodes) are placed inside the deep BGO active-shield well of a phoswich counter, to achieve an extremely low background environment. Thus, the HXD utilizes 64 stacked silicon PIN detectors, achieving a total geometrical collecting area of 256 cm2. We have developed the 2 mm thick silicon PIN diodes which have a low leakage current, a low capacitance, and a high breakdown voltage to meet the requirements of our goal. Through various trials in fabricating PIN diodes with different structures, we have found optimal design parameters, such as mask design of the surface p+ layer and the implantation process.
AB - ASTRO-E is the next Japanese X-ray satellite to be launched in the year of 2000. It carries three high-energy astrophysical experiments, including the Hard X-ray Detector (HXD) which is unique in covering the wide energy band from 10 keV to 700 keV with an extremely low background. The HXD is a compound-eye detector, employing 16 GSO/BGO well-type phoswich scintillation counters together with 64 silicon PIN detectors. The scintillation counters cover an energy range of 40-700 keV, while the PIN diodes fill the intermediate energy range from 10 keV to 70 keV with an energy resolution about 3 keV. In this paper, we report on the developments of the large area, thick silicon PIN diodes. In order to achieve a high quantum efficiency up to 70 keV with a high energy resolution, we utilize a double stack of silicon PIN diodes, each 20 × 20 mm2 in size and 2 mm thick. Signals from the two diodes are summed into a single output. Four of these stacks (or eight diodes) are placed inside the deep BGO active-shield well of a phoswich counter, to achieve an extremely low background environment. Thus, the HXD utilizes 64 stacked silicon PIN detectors, achieving a total geometrical collecting area of 256 cm2. We have developed the 2 mm thick silicon PIN diodes which have a low leakage current, a low capacitance, and a high breakdown voltage to meet the requirements of our goal. Through various trials in fabricating PIN diodes with different structures, we have found optimal design parameters, such as mask design of the surface p+ layer and the implantation process.
KW - Hard X-ray detector
KW - High purity Si material
KW - Large area detector
KW - Silicon PIN diode
KW - X-ray astronomy
UR - http://www.scopus.com/inward/record.url?scp=0001331405&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0001331405&partnerID=8YFLogxK
U2 - 10.1117/12.277691
DO - 10.1117/12.277691
M3 - Conference article
AN - SCOPUS:0001331405
VL - 3115
SP - 244
EP - 253
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
SN - 0277-786X
T2 - Hard X-Ray and Gamma-Ray Detector Physics, Optics, and Applications
Y2 - 31 July 1997 through 1 August 1997
ER -