Development of the large area silicon PIN diode with 2mm-thick depletion layer for Hard X-ray Detector (HXD) on-board Astro-E

Mutsumi Sugisaki; Shin Kubo; Toshio Murakami; Naomi Ohta; H. Ozawa; Tadayuki Takahashi; H. KanedaNaoko Iyomoto; ?6? ?24??11?? ?6? ?24??11??; Shuji Kubota

Development of the large area silicon PIN diode with 2mm-thick depletion layer for Hard X-ray Detector (HXD) on-board Astro-E

Mutsumi Sugisaki, Shin Kubo, Toshio Murakami, Naomi Ohta, H. Ozawa, Tadayuki Takahashi, H. KanedaNaoko Iyomoto, ?6? ?24??11?? ?6? ?24??11??, Shuji Kubota

機能制御システム専攻

研究成果: Article › 査読

本文言語	English
ページ（範囲）	244-253
ジャーナル	SPIE
巻	3115
出版ステータス	Published - 1997 7月 1

引用スタイル

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title = "Development of the large area silicon PIN diode with 2mm-thick depletion layer for Hard X-ray Detector (HXD) on-board Astro-E",

author = "Mutsumi Sugisaki and Shin Kubo and Toshio Murakami and Naomi Ohta and H. Ozawa and Tadayuki Takahashi and Iyomoto, {H. KanedaNaoko} and {?6? ?24??11??}, {?6? ?24??11??} and Shuji Kubota",

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volume = "3115",

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AU - Sugisaki, Mutsumi

AU - Kubo, Shin

AU - Murakami, Toshio

AU - Ohta, Naomi

AU - Ozawa, H.

AU - Takahashi, Tadayuki

AU - Iyomoto, H. KanedaNaoko

AU - ?6? ?24??11??, ?6? ?24??11??

AU - Kubota, Shuji

PY - 1997/7/1

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VL - 3115

SP - 244

EP - 253

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