DEVICE CHARACTERIZATION OF P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FET'S.

Makoto Hirano, Kunishige Oe, Fumihiko Yanagawa, Kotaro Tsubaki

    研究成果: Article査読

    8 被引用数 (Scopus)

    抄録

    p-channel AlGaAs/GaAs MIS-like heterostructure FETs (p-MIS HFETs) are characterized concerning their gate-source leakage current. Device performance is confirmed to improve approximately inversely to layer thickness d//t between the channel and metal gate, at low gate voltages. A high transconductance g//m of 110 ms-mm** minus **1 is obtained at 77 K by reducing d//t to 20 nm. More results are presented on the effect of the gate-source leakage current on device performance.

    本文言語English
    ジャーナルIEEE Transactions on Electron Devices
    ED-34
    12
    出版ステータスPublished - 1987 12 1

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 電子工学および電気工学

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