Dielectric and electrical properties of amorphous La1-xTa xOy films as higher- k gate insulators

Yi Zhao, Koji Kita, Kentaro Kyuno, Akira Toriumi

研究成果: Article査読

19 被引用数 (Scopus)


In this study, we investigated the applicability of an amorphous, high-permittivity (k) dielectric film La1-xTaxO y as an alternative gate insulator in next-generation complementary metal-oxide-semiconductor devices and metal-insulator-metal capacitors. La 1-xTaxOy films not only show a crystallization temperature higher than 1000 °C, but also a permittivity as high as 30. La1-xTaxOy films also have a much larger band gap than Ta2O5 films because of the coupling effect between the 5d orbitals of La and Ta atoms bonding to a common oxygen atom. Therefore, La1-xTaxOy films with appropriate Ta concentration are promising amorphous high- k gate insulators.

ジャーナルJournal of Applied Physics
出版ステータスPublished - 2009 2 24

ASJC Scopus subject areas

  • Physics and Astronomy(all)

フィンガープリント 「Dielectric and electrical properties of amorphous La<sub>1-x</sub>Ta <sub>x</sub>O<sub>y</sub> films as higher- k gate insulators」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。