Dielectric and electrical properties of amorphous La1-xTa xOy films as higher- k gate insulators

Yi Zhao, Koji Kita, Kentaro Kyuno, Akira Toriumi

研究成果: Article査読

19 被引用数 (Scopus)

抄録

In this study, we investigated the applicability of an amorphous, high-permittivity (k) dielectric film La1-xTaxO y as an alternative gate insulator in next-generation complementary metal-oxide-semiconductor devices and metal-insulator-metal capacitors. La 1-xTaxOy films not only show a crystallization temperature higher than 1000 °C, but also a permittivity as high as 30. La1-xTaxOy films also have a much larger band gap than Ta2O5 films because of the coupling effect between the 5d orbitals of La and Ta atoms bonding to a common oxygen atom. Therefore, La1-xTaxOy films with appropriate Ta concentration are promising amorphous high- k gate insulators.

本文言語English
論文番号034103
ジャーナルJournal of Applied Physics
105
3
DOI
出版ステータスPublished - 2009 2 24

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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