抄録
The bonding of InP and rare earth iron garnet grown on Gd3Ga5O12 substrate without any additional material is demonstrated. After chemical treatment, heat treatment in H2 ambient results in the bonding of the samples. This process is applicable to the integration of semiconductor and magneto-optic devices.
本文言語 | English |
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ページ(範囲) | 1612-1613 |
ページ数 | 2 |
ジャーナル | Electronics Letters |
巻 | 31 |
号 | 18 |
DOI | |
出版ステータス | Published - 1995 8月 31 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学