Direct bonding between InP and rare earth iron garnet grown on Gd3Ga5O12 substrate by liquid phase epitaxy

H. Yokoi; T. Mizumoto; K. Maru; Y. Naito

doi:10.1049/el:19951050

Direct bonding between InP and rare earth iron garnet grown on Gd₃Ga₅O₁₂ substrate by liquid phase epitaxy

H. Yokoi, T. Mizumoto, K. Maru, Y. Naito

研究成果: Article › 査読

24 被引用数 (Scopus)

抄録

The bonding of InP and rare earth iron garnet grown on Gd₃Ga₅O₁₂ substrate without any additional material is demonstrated. After chemical treatment, heat treatment in H₂ ambient results in the bonding of the samples. This process is applicable to the integration of semiconductor and magneto-optic devices.

本文言語	English
ページ（範囲）	1612-1613
ページ数	2
ジャーナル	Electronics Letters
巻	31
号	18
DOI	https://doi.org/10.1049/el:19951050
出版ステータス	Published - 1995 8月 31
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

文献へのアクセス

10.1049/el:19951050

他のファイルとリンク

引用スタイル

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abstract = "The bonding of InP and rare earth iron garnet grown on Gd3Ga5O12 substrate without any additional material is demonstrated. After chemical treatment, heat treatment in H2 ambient results in the bonding of the samples. This process is applicable to the integration of semiconductor and magneto-optic devices.",

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