抜粋
The bonding of InP and rare earth iron garnet grown on Gd3Ga5O12 substrate without any additional material is demonstrated. After chemical treatment, heat treatment in H2 ambient results in the bonding of the samples. This process is applicable to the integration of semiconductor and magneto-optic devices.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 1612-1613 |
| ページ数 | 2 |
| ジャーナル | Electronics Letters |
| 巻 | 31 |
| 発行部数 | 18 |
| DOI | |
| 出版物ステータス | Published - 1995 8 31 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
フィンガープリント Direct bonding between InP and rare earth iron garnet grown on Gd<sub>3</sub>Ga<sub>5</sub>O<sub>12</sub> substrate by liquid phase epitaxy' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Yokoi, H., Mizumoto, T., Maru, K., & Naito, Y. (1995). Direct bonding between InP and rare earth iron garnet grown on Gd3Ga5O12 substrate by liquid phase epitaxy. Electronics Letters, 31(18), 1612-1613. https://doi.org/10.1049/el:19951050