Direct bonding between InP and rare earth iron garnet grown on Gd3Ga5O12 substrate by liquid phase epitaxy

H. Yokoi; T. Mizumoto; K. Maru; Y. Naito

doi:10.1049/el:19951050

Direct bonding between InP and rare earth iron garnet grown on Gd₃Ga₅O₁₂ substrate by liquid phase epitaxy

H. Yokoi, T. Mizumoto, K. Maru, Y. Naito

研究成果: Article › 査読

24 被引用数 (Scopus)

抄録

The bonding of InP and rare earth iron garnet grown on Gd₃Ga₅O₁₂ substrate without any additional material is demonstrated. After chemical treatment, heat treatment in H₂ ambient results in the bonding of the samples. This process is applicable to the integration of semiconductor and magneto-optic devices.

本文言語	English
ページ（範囲）	1612-1613
ページ数	2
ジャーナル	Electronics Letters
巻	31
号	18
DOI	https://doi.org/10.1049/el:19951050
出版ステータス	Published - 1995 8 31
外部発表	はい

ASJC Scopus subject areas

Electrical and Electronic Engineering

文献へのアクセス

10.1049/el:19951050

他のファイルとリンク

フィンガープリント「Direct bonding between InP and rare earth iron garnet grown on Gd3Ga5O12 substrate by liquid phase epitaxy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

@article{a0566fc7bf8e4f11ab5acea06d4de882,

title = "Direct bonding between InP and rare earth iron garnet grown on Gd3Ga5O12 substrate by liquid phase epitaxy",

abstract = "The bonding of InP and rare earth iron garnet grown on Gd3Ga5O12 substrate without any additional material is demonstrated. After chemical treatment, heat treatment in H2 ambient results in the bonding of the samples. This process is applicable to the integration of semiconductor and magneto-optic devices.",

keywords = "Garnets, Indium phosphide, Wafer bonding",

author = "H. Yokoi and T. Mizumoto and K. Maru and Y. Naito",

year = "1995",

month = aug,

day = "31",

doi = "10.1049/el:19951050",

language = "English",

volume = "31",

pages = "1612--1613",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "18",

}

TY - JOUR

T1 - Direct bonding between InP and rare earth iron garnet grown on Gd3Ga5O12 substrate by liquid phase epitaxy

AU - Yokoi, H.

AU - Mizumoto, T.

AU - Maru, K.

AU - Naito, Y.

PY - 1995/8/31

Y1 - 1995/8/31

N2 - The bonding of InP and rare earth iron garnet grown on Gd3Ga5O12 substrate without any additional material is demonstrated. After chemical treatment, heat treatment in H2 ambient results in the bonding of the samples. This process is applicable to the integration of semiconductor and magneto-optic devices.

AB - The bonding of InP and rare earth iron garnet grown on Gd3Ga5O12 substrate without any additional material is demonstrated. After chemical treatment, heat treatment in H2 ambient results in the bonding of the samples. This process is applicable to the integration of semiconductor and magneto-optic devices.

KW - Garnets

KW - Indium phosphide

KW - Wafer bonding

UR - http://www.scopus.com/inward/record.url?scp=0029352973&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029352973&partnerID=8YFLogxK

U2 - 10.1049/el:19951050

DO - 10.1049/el:19951050

M3 - Article

AN - SCOPUS:0029352973

VL - 31

SP - 1612

EP - 1613

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 18

ER -