Direct bonding between InP and rare earth iron garnet grown on Gd3Ga5O12 substrate by liquid phase epitaxy

H. Yokoi, T. Mizumoto, K. Maru, Y. Naito

研究成果: Article

23 引用 (Scopus)

抜粋

The bonding of InP and rare earth iron garnet grown on Gd3Ga5O12 substrate without any additional material is demonstrated. After chemical treatment, heat treatment in H2 ambient results in the bonding of the samples. This process is applicable to the integration of semiconductor and magneto-optic devices.

元の言語English
ページ(範囲)1612-1613
ページ数2
ジャーナルElectronics Letters
31
発行部数18
DOI
出版物ステータスPublished - 1995 8 31

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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