Direct bonding between laser wafers and magneto-optic waveguides

Hideki Yokoi; Tetsuya Mizumoto; Koichi Maru; Yoshiyuki Naito

Direct bonding between laser wafers and magneto-optic waveguides

Hideki Yokoi, Tetsuya Mizumoto, Koichi Maru, Yoshiyuki Naito

研究成果: Paper › 査読

抄録

Wafer direct bonding is an attractive technique for the integration of different materials. In a previous study, the bonding between InP and several kinds of garnets which are essential to an optical isolator was demonstrated. When the optical isolator is integrated with the laser wafer as shown in Fig. 1, the surface of garnet wafer where a rib waveguide is formed is to be bonded with an etch stop layer for the vertical alignment. This paper reports the direct bonding between GaInAsP etch stop layer and Gd₃Ga₅O₁₂ (GGG) which is used as a substrate for magneto-optic crystal growth. The bonding is also described between InP and the garnet rib waveguide.

本文言語	English
ページ数	1
出版ステータス	Published - 1996 1 1
外部発表	はい
イベント	Proceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe - Hamburg, Ger 継続期間: 1996 9 8 → 1996 9 13

Other

Other	Proceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe
City	Hamburg, Ger
Period	96/9/8 → 96/9/13

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

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引用スタイル

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year = "1996",

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T1 - Direct bonding between laser wafers and magneto-optic waveguides

AU - Yokoi, Hideki

AU - Mizumoto, Tetsuya

AU - Maru, Koichi

AU - Naito, Yoshiyuki

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Wafer direct bonding is an attractive technique for the integration of different materials. In a previous study, the bonding between InP and several kinds of garnets which are essential to an optical isolator was demonstrated. When the optical isolator is integrated with the laser wafer as shown in Fig. 1, the surface of garnet wafer where a rib waveguide is formed is to be bonded with an etch stop layer for the vertical alignment. This paper reports the direct bonding between GaInAsP etch stop layer and Gd3Ga5O12 (GGG) which is used as a substrate for magneto-optic crystal growth. The bonding is also described between InP and the garnet rib waveguide.

AB - Wafer direct bonding is an attractive technique for the integration of different materials. In a previous study, the bonding between InP and several kinds of garnets which are essential to an optical isolator was demonstrated. When the optical isolator is integrated with the laser wafer as shown in Fig. 1, the surface of garnet wafer where a rib waveguide is formed is to be bonded with an etch stop layer for the vertical alignment. This paper reports the direct bonding between GaInAsP etch stop layer and Gd3Ga5O12 (GGG) which is used as a substrate for magneto-optic crystal growth. The bonding is also described between InP and the garnet rib waveguide.

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T2 - Proceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe

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