An integrated optical isolator employing a nonreciprocal phase shift is very attractive because it does not need phase matching. We have investigated a novel configuration of the integrated optical isolator, employing the nonreciprocal phase shift, in which the magnetooptic waveguide has a magnetic garnet/GalnAsP/InP structure. The wafer direct bonding technique is necessary to realize this structure. The direct bonding between quaternary III-V compound semiconductors and garnet crystals was experimentally studied. The bonding was achieved by chemical treatment and subsequent heat treatment at temperatures ranging from 110 to 330°C. Cross-sectional scanning electron microscope (SEM) images indicated that there were no gaps between the two wafers in contact.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 1999 1 1|
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