Direct deposition of multilayer graphene on dielectrics via solid-phase precipitation from carbon-doped cobalt with a copper capping layer

Kazuyoshi Ueno, Shota Sano, Yuji Matsumoto

研究成果: Article査読

3 被引用数 (Scopus)

抄録

A method for producing a uniform multilayer graphene (MLG) film directly on SiO2 via solid-phase precipitation from carbon-doped cobalt (Co-C) with a Cu capping layer has been developed for a large scale integration (LSI) interconnect application. One advantage is that no transfer process is required. A 20 nm thick MLG film was grown uniformly from a 100 nm thick Co-C (20 at%) catalyst layer with a Cu capping layer. Cross-sectional TEM/EDX images revealed that the optimized Cu capping layer prevents Co agglomeration during annealing and promotes C precipitation on the SiO2 while eliminating it on the top surface of the catalytic metals.

本文言語English
論文番号026501
ジャーナルJapanese Journal of Applied Physics
58
2
DOI
出版ステータスPublished - 2019 1 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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