The interlayer van der Waals bonding force in crystalline InSe was directly measured using a mechanical test equipment. The bulk γ-InSe crystal was grown by the temperature difference method under controlled vapor pressure, a unique liquid phase solution crystal growth method with a low and fixed growth temperature. The measured bonding force in the crystal was 20.8 N/cm2, which is greater than that in 2D crystalline GaSe. We also made theoretical discussion of the van der Waals forces in InSe, based on the fluctuations in the electron cloud distributions around the atoms.
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