Distinct fine and coarse ripples on 4H-SiC single crystal induced by femtosecond laser irradiation

Takuro Tomita, Keita Kinoshita, Shigeki Matsuo, Shuichi Hashimoto

研究成果: Article

36 引用 (Scopus)

抄録

Upon femtosecond pulsed-laser irradiation, periodic structures referred to as "ripples" were fabricated on the surface of a 4H-SiC single crystal. The periodic structures consisted of two concentric regions in the irradiated spots which were clearly distinguished by the period. Surface morphologies were characterized as a function of energy, accumulation number, and interval of pulses. The difference in the threshold of fine and coarse ripples was identified for the first time. The possible formation mechanisms of these structures were discussed.

元の言語English
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
45
発行部数12-16
DOI
出版物ステータスPublished - 2006
外部発表Yes

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Periodic structures
Laser beam effects
Ultrashort pulses
ripples
Single crystals
irradiation
single crystals
Pulsed lasers
lasers
Surface morphology
pulsed lasers
intervals
thresholds
pulses
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

Distinct fine and coarse ripples on 4H-SiC single crystal induced by femtosecond laser irradiation. / Tomita, Takuro; Kinoshita, Keita; Matsuo, Shigeki; Hashimoto, Shuichi.

:: Japanese Journal of Applied Physics, Part 2: Letters, 巻 45, 番号 12-16, 2006.

研究成果: Article

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AU - Hashimoto, Shuichi

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KW - Femtosecond laser

KW - Ripple

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