Dynamic profile calculation of deposition resolution by high-energy electrons in electron-beam-induced deposition

K. Mitsuishi, Z. Q. Liu, M. Shimojo, M. Han, K. Furuya

研究成果: Article査読

35 被引用数 (Scopus)

抄録

The effect of the accelerating voltage of incident electrons on the resolution of electron-beam-induced deposition was investigated by a dynamic Monte Carlo profile simulator which includes the electron scattering in the already grown deposit structure. By simulating the deposition at two different accelerating voltages of 20 and 200 kV with an idealistic zero-diameter incident probe on a bulk substrate, it was revealed that the smaller size structures were attainable by 200 keV than by 20 keV. The effect of the substrate was also argued by comparing the above results with the simulation results obtained for a point-like starting substrate. Surprisingly, the shapes of the deposits grown on bulk substrates were reproduced well by the simulations starting from point-like substrates indicating the small effect of the substrate on the shape of deposits.

本文言語English
ページ(範囲)17-22
ページ数6
ジャーナルUltramicroscopy
103
1
DOI
出版ステータスPublished - 2005 4 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 器械工学

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