EBIC observation of n-GaN grown on sapphire substrates by MOCVD

Kensaku Yamamoto; Hiroyasu Ishikawa; Takashi Egawa; Takashi Jimbo; Masayoshi Umeno

doi:10.1016/S0022-0248(98)00203-6

EBIC observation of n-GaN grown on sapphire substrates by MOCVD

Kensaku Yamamoto, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

研究成果: Article › 査読

17 被引用数 (Scopus)

抄録

Si-doped GaN layers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by using electron beam-induced current (EBIC) and molten KOH etching. Dark spot densities in EBIC image are be 1.0 and 1.2 × 10⁸ cm^-2 depending on the accelerating voltage. The dark spots in EBIC image correspond to recombination centers. When we compare dark spot density with etch pit density revealed molten KOH, this is the same order as the EPD revealed by molten KOH. We confirm there are many dislocations which influence recombination of minority carriers in the layers.

本文言語	English
ページ（範囲）	575-579
ページ数	5
ジャーナル	Journal of Crystal Growth
巻	189-190
DOI	https://doi.org/10.1016/S0022-0248(98)00203-6
出版ステータス	Published - 1998 6月 15
外部発表	はい

ASJC Scopus subject areas

凝縮系物理学
無機化学
材料化学

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10.1016/S0022-0248(98)00203-6

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title = "EBIC observation of n-GaN grown on sapphire substrates by MOCVD",

abstract = "Si-doped GaN layers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by using electron beam-induced current (EBIC) and molten KOH etching. Dark spot densities in EBIC image are be 1.0 and 1.2 × 108 cm-2 depending on the accelerating voltage. The dark spots in EBIC image correspond to recombination centers. When we compare dark spot density with etch pit density revealed molten KOH, this is the same order as the EPD revealed by molten KOH. We confirm there are many dislocations which influence recombination of minority carriers in the layers.",

keywords = "Defect, EBIC, Etch pit density, Nonradiative recombination, Schottky diodes, Si-doped GaN",

author = "Kensaku Yamamoto and Hiroyasu Ishikawa and Takashi Egawa and Takashi Jimbo and Masayoshi Umeno",

note = "Funding Information: The authors wish to thank K. Nakamura for helping our experiments. This work was partially supported by a Grant-in-Aid for Scientific Research (c) (09650049) from The Ministry of Education, Science, Sports and Culture.",

year = "1998",

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doi = "10.1016/S0022-0248(98)00203-6",

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T1 - EBIC observation of n-GaN grown on sapphire substrates by MOCVD

AU - Yamamoto, Kensaku

AU - Ishikawa, Hiroyasu

AU - Egawa, Takashi

AU - Jimbo, Takashi

AU - Umeno, Masayoshi

N1 - Funding Information: The authors wish to thank K. Nakamura for helping our experiments. This work was partially supported by a Grant-in-Aid for Scientific Research (c) (09650049) from The Ministry of Education, Science, Sports and Culture.

PY - 1998/6/15

Y1 - 1998/6/15

N2 - Si-doped GaN layers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by using electron beam-induced current (EBIC) and molten KOH etching. Dark spot densities in EBIC image are be 1.0 and 1.2 × 108 cm-2 depending on the accelerating voltage. The dark spots in EBIC image correspond to recombination centers. When we compare dark spot density with etch pit density revealed molten KOH, this is the same order as the EPD revealed by molten KOH. We confirm there are many dislocations which influence recombination of minority carriers in the layers.

AB - Si-doped GaN layers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by using electron beam-induced current (EBIC) and molten KOH etching. Dark spot densities in EBIC image are be 1.0 and 1.2 × 108 cm-2 depending on the accelerating voltage. The dark spots in EBIC image correspond to recombination centers. When we compare dark spot density with etch pit density revealed molten KOH, this is the same order as the EPD revealed by molten KOH. We confirm there are many dislocations which influence recombination of minority carriers in the layers.

KW - Defect

KW - EBIC

KW - Etch pit density

KW - Nonradiative recombination

KW - Schottky diodes

KW - Si-doped GaN

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

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EBIC observation of n-GaN grown on sapphire substrates by MOCVD

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