Si-doped GaN layers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by using electron beam-induced current (EBIC) and molten KOH etching. Dark spot densities in EBIC image are be 1.0 and 1.2 × 108 cm-2 depending on the accelerating voltage. The dark spots in EBIC image correspond to recombination centers. When we compare dark spot density with etch pit density revealed molten KOH, this is the same order as the EPD revealed by molten KOH. We confirm there are many dislocations which influence recombination of minority carriers in the layers.
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