Effect of deep-acceptor density in buffer layer on breakdown voltage of AIGaN/GaN HEMTs with high-k passivation layer

S. Ueda, Y. Kawada, Kazushige Horio

研究成果: Conference contribution

抜粋

We make a numerical analysis of breakdown characteristics of AIGaN/GaN HEMTs with a high-k passivation layer, where a deep acceptor above the midgap is considered in a buffer layer and its density NDA is varied between 1017 and 3×l017 cm-3. It is shown that, generally, the breakdown voltage Vbr becomes higher when the relative permittivity of the passivation layer ϵr is higher. In the case where NDA is relatively low, Vbr is determined by impact ionization of carriers when ϵτ, is low, but it becomes determined by buffer leakage current when ϵτ is high, and Vbr becomes saturated with increasing ϵr. On the other hand, when Nda is relatively high, Vbr is determined by impact ionization of carriers even if ϵτ becomes 60, and it becomes about 500 V at the gate-to-drain distance of 1.5 μm, which corresponds to an average electric field of over 3 MV/cm.

元の言語English
ホスト出版物のタイトルTechConnect Briefs 2018 - Informatics, Electronics and Microsystems
編集者Matthew Laudon, Fiona Case, Bart Romanowicz, Fiona Case
出版者TechConnect
ページ24-27
ページ数4
4
ISBN(電子版)9780998878256
出版物ステータスPublished - 2018 1 1
イベント11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference - Anaheim, United States
継続期間: 2018 5 132018 5 16

Other

Other11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference
United States
Anaheim
期間18/5/1318/5/16

ASJC Scopus subject areas

  • Materials Science(all)

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  • これを引用

    Ueda, S., Kawada, Y., & Horio, K. (2018). Effect of deep-acceptor density in buffer layer on breakdown voltage of AIGaN/GaN HEMTs with high-k passivation layer. : M. Laudon, F. Case, B. Romanowicz, & F. Case (版), TechConnect Briefs 2018 - Informatics, Electronics and Microsystems (巻 4, pp. 24-27). TechConnect.