Effect of dynamic precursor gas pressure on growth behavior of amorphous Si-C-O nanorods by electron beam-induced deposition

The effects of dynamic precursor gas pressure on growth behavior of amorphous Si-C-O nanorods and electron beam scanned speed by electron beam-induced deposition (EBID) process were investigated. The EBID experiment was carried out in a 30 kV field emission gun scanning electron microscope, where the electron beam current was about 0.8 nA with a beam diameter of 4 nm. A 300 kV JEM-3000F field-emission gun transmission electron microscope, attached with a post-column Gatan imaging filter and CCD camera, was employed to characterize the deposits by a high-resolution transmission electron microscopy (HRTEM) and energy-filtered transmission electron microscopy (EFTEM). Experimental investigation showed that the nanorod width remains constant with the dynamic reduction of precursor gas pressure.