Effect of gold layer thickness on the low-temperature crystallization process of germanium thin films by gold-induced crystallization

Narin Sunthornpan, Kohtaroh Tauchi, Nairu Tezuka, Kentaro Kyuno

研究成果: Article査読

抄録

The effect of Au layer thickness (1, 2.5, 5, 7.5 and 10 nm) on the low-temperature crystallization of Ge thin films (30 nm) was examined. It is found that the best Ge crystallinity is achieved at an Au layer thickness of 2.5 nm. This finding will open up the possibility to reduce the amount of Au consumption in the low-temperature crystallization process of Ge thin films.

本文言語English
論文番号080904
ジャーナルJapanese Journal of Applied Physics
59
8
DOI
出版ステータスPublished - 2020 8 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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