Effect of high-temperature treatment on optical-absorption bands in amorphous SiO2

Nobuyuki Dohguchi, Shuji Munekuni, Hiroyuki Nishikawa, Yoshimichi Ohki, Kaya Nagasawa

研究成果: Article

3 引用 (Scopus)

抜粋

The intensity change in optical absorption at 3.8, 5.0, and 5.8 eV was measured for thermal treatment up to 1000 °C done on silica glass samples manufactured by various methods. It was found that these absorption bands change differently with heat, depending on the synthesis process of the sample. The 3.8-eV absorption band due to peroxy linkage is found to increase with high-temperature treatment when the sample contains dissolved oxygen molecules within the sample. For the sample with no oxygen molecules, high- temperaturetreatment does not alter the absorption intensity at 3.8 eV. The 5.0-eV absorption band is found to decrease by high-temperature treatment. In the case of an oxygen-containingsample, the reaction of oxygen molecules with oxygen vacancy sites is a cause of this decrease. The 5.1-eV band, which was thought to have no temperature dependence, is found to be annealed at a temperature region around 950 °C.

元の言語English
ページ(範囲)2788-2790
ページ数3
ジャーナルJournal of Applied Physics
70
発行部数5
DOI
出版物ステータスPublished - 1991 12 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

フィンガープリント Effect of high-temperature treatment on optical-absorption bands in amorphous SiO<sub>2</sub>' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用