| 元の言語 | English |
|---|---|
| ページ（範囲） | 2788-2790 |
| ジャーナル | Journal of Applied Physics |
| 巻 | 70 |
| 出版物ステータス | Published - 1991 9 1 |
これを引用
Dohguchi, N., Munekuni, S., Nishikawa, H., Ohki, Y., & Nagasawa, K. (1991). Effect of high-temperature treatment on optical-absorption bands in amorphous SiO2. Journal of Applied Physics, 70, 2788-2790.
Effect of high-temperature treatment on optical-absorption bands in amorphous SiO2. / Dohguchi, N.; Munekuni, S.; Nishikawa, H.; Ohki, Y.; Nagasawa, K.
：: Journal of Applied Physics, 巻 70, 01.09.1991, p. 2788-2790.研究成果: Article
Dohguchi, N, Munekuni, S, Nishikawa, H, Ohki, Y & Nagasawa, K 1991, 'Effect of high-temperature treatment on optical-absorption bands in amorphous SiO2', Journal of Applied Physics, 巻. 70, pp. 2788-2790.
Dohguchi N, Munekuni S, Nishikawa H, Ohki Y, Nagasawa K. Effect of high-temperature treatment on optical-absorption bands in amorphous SiO2. Journal of Applied Physics. 1991 9 1;70:2788-2790.
@article{fc0f34801d664ba188177ab2a4aa9a59,
title = "Effect of high-temperature treatment on optical-absorption bands in amorphous SiO2",
author = "N. Dohguchi and S. Munekuni and H. Nishikawa and Y. Ohki and K. Nagasawa",
year = "1991",
month = "9",
day = "1",
language = "English",
volume = "70",
pages = "2788--2790",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
}
TY - JOUR
T1 - Effect of high-temperature treatment on optical-absorption bands in amorphous SiO2
AU - Dohguchi, N.
AU - Munekuni, S.
AU - Nishikawa, H.
AU - Ohki, Y.
AU - Nagasawa, K.
PY - 1991/9/1
Y1 - 1991/9/1
M3 - Article
VL - 70
SP - 2788
EP - 2790
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
ER -