Effect of high-temperature treatment on optical-absorption bands in amorphous SiO2

N. Dohguchi, S. Munekuni, H. Nishikawa, Y. Ohki, K. Nagasawa

研究成果: Article

3 引用 (Scopus)
元の言語English
ページ(範囲)2788-2790
ジャーナルJournal of Applied Physics
70
出版物ステータスPublished - 1991 9 1

これを引用

Effect of high-temperature treatment on optical-absorption bands in amorphous SiO2. / Dohguchi, N.; Munekuni, S.; Nishikawa, H.; Ohki, Y.; Nagasawa, K.

:: Journal of Applied Physics, 巻 70, 01.09.1991, p. 2788-2790.

研究成果: Article

Dohguchi, N, Munekuni, S, Nishikawa, H, Ohki, Y & Nagasawa, K 1991, 'Effect of high-temperature treatment on optical-absorption bands in amorphous SiO2', Journal of Applied Physics, 巻. 70, pp. 2788-2790.
Dohguchi, N. ; Munekuni, S. ; Nishikawa, H. ; Ohki, Y. ; Nagasawa, K. / Effect of high-temperature treatment on optical-absorption bands in amorphous SiO2. :: Journal of Applied Physics. 1991 ; 巻 70. pp. 2788-2790.
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