抄録
We focus on the growth of p-type CuAlO2 thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger grains (about 10 μm in size) and shows Seebeck coefficient as high as 270 µV/K with a conductivity of about 0.8 S/cm so that its power factor is about 5.7 µW/mK2 at 800 K, twice than observed in the film deposited at 60 mTorr of oxygen.
| 元の言語 | English |
|---|---|
| ジャーナル | Journal of Materials Engineering and Performance |
| DOI | |
| 出版物ステータス | Accepted/In press - 2018 1 1 |
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ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
これを引用
Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition. / Saini, Shrikant; Mele, Paolo; Osugi, Shunsuke; Adam, Malik I.
：: Journal of Materials Engineering and Performance, 01.01.2018.研究成果: Article
}
TY - JOUR
T1 - Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition
AU - Saini, Shrikant
AU - Mele, Paolo
AU - Osugi, Shunsuke
AU - Adam, Malik I.
PY - 2018/1/1
Y1 - 2018/1/1
N2 - We focus on the growth of p-type CuAlO2 thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger grains (about 10 μm in size) and shows Seebeck coefficient as high as 270 µV/K with a conductivity of about 0.8 S/cm so that its power factor is about 5.7 µW/mK2 at 800 K, twice than observed in the film deposited at 60 mTorr of oxygen.
AB - We focus on the growth of p-type CuAlO2 thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger grains (about 10 μm in size) and shows Seebeck coefficient as high as 270 µV/K with a conductivity of about 0.8 S/cm so that its power factor is about 5.7 µW/mK2 at 800 K, twice than observed in the film deposited at 60 mTorr of oxygen.
KW - CuAlO
KW - heat harvesting
KW - oxides
KW - pulsed laser deposition
KW - thermoelectrics
KW - thin films
UR - http://www.scopus.com/inward/record.url?scp=85053235452&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85053235452&partnerID=8YFLogxK
U2 - 10.1007/s11665-018-3601-6
DO - 10.1007/s11665-018-3601-6
M3 - Article
AN - SCOPUS:85053235452
JO - Journal of Materials Engineering and Performance
JF - Journal of Materials Engineering and Performance
SN - 1059-9495
ER -