Effect of reaction temperature on growth of organosilane self-assembled monolayers

Sunhyung Lee, Takahiro Ishizaki, Nagahiro Saito, Osamu Takai

研究成果: Article査読

8 被引用数 (Scopus)

抄録

The effect of reaction temperature on the self-organization and growth mechanism of octadecyltrichlorosilane (OTS) self-assembled monolayers (SAM) was investigated by atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXD) measurement, Fourier transform infrared spectroscopy (FT-IR), and X-ray photoelectron spectroscopy (XPS). OTS SAM was prepared by a liquid phase method and chemical vapor deposition. In the liquid phase method, OTS SAM was prepared in the temperature range from 5 to 40 °C. In the reaction temperature range from 5 to 30 °C, OTS molecules formed domain structures early in the growth process and grew two-dimensionally on SiO2 substrates. In addition, the crystalline peaks of GIXD measurements indicated that OTS SAM prepared at lower temperatures (5-30 °C) grew in the crystalline state. Thus, "self-organization" occurred under these conditions. However, OTS SAM prepared at 40 °C showed an amorphous structure. XPS and FT-IR spectra showed that the SiO2 peak increased while reaction temperature decreased. These results indicated that the formation of a siloxane bond between OTS molecules was important for the self-organization of the OTS monolayer. In addition, FT-IR measurement indicated that the packing density of the OTS monolayer prepared at lower temperatures was higher than that prepared at higher temperatures by chemical vapor deposition.

本文言語English
ページ(範囲)6442-6447
ページ数6
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
47
8 PART 1
DOI
出版ステータスPublished - 2008 8月 8
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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