抄録
The influence of self-grown seed has been studied on thermoelectric performance of 2% Al-doped ZnO(AZO) thin films. The thickness and orientation of c-axis domains in seed layer change on different substrates while other deposition conditions were kept unchanged for a comparable study. The changes occur because of the different nucleation process of thin film growth on substrate interface and the different lattice mismatch between AZO and substrate. Thin films are grown by pulsed laser deposition on single crystals (SrTiO3 (STO) and Al2O3) and cheap amorphous fused silica (FS) substrates at 400 °C. All thin films are c axis oriented. The grains are highly connected and elongated in shapewhich leads to high thermoelectric properties. The thicker self-grown seed layer is found in thin film deposited on FS substrates which shows best performance: electrical conductivity s=93 S/cm and Seebeck coefficient S=-203 μV/K, which estimate power factor (S2.σ) about 0.37 × 10-3Wm-1K-2 at 600 K.The value of thermal conductivity (k) was found lowest (4.89Wm-1K-1) for thin film deposited on FS than the other thin films (6.9Wm-1K-1 on Al2O3 and 6.55Wm-1K-1 on STO) at 300 K. The figure ofmerit, ZT=S2.σ.T/κ, is calculated 0.046 at 600 K, 5 times larger than the ZT of our previous reported bulk AZO,which is promising for practical applications of thermoelectric oxide thin films.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 289-294 |
| ページ数 | 6 |
| ジャーナル | Thin Solid Films |
| 巻 | 605 |
| DOI | |
| 出版物ステータス | Published - 2016 4 30 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
これを引用
Effect of self-grown seed layer on thermoelectric properties of ZnO thin films. / Saini, S.; Mele, Paolo; Honda, H.; Suzuki, T.; Matsumoto, K.; Miyazaki, K.; Ichinose, A.; Molina Luna, L.; Carlini, R.; Tiwari, A.
：: Thin Solid Films, 巻 605, 30.04.2016, p. 289-294.研究成果: Article
}
TY - JOUR
T1 - Effect of self-grown seed layer on thermoelectric properties of ZnO thin films
AU - Saini, S.
AU - Mele, Paolo
AU - Honda, H.
AU - Suzuki, T.
AU - Matsumoto, K.
AU - Miyazaki, K.
AU - Ichinose, A.
AU - Molina Luna, L.
AU - Carlini, R.
AU - Tiwari, A.
PY - 2016/4/30
Y1 - 2016/4/30
N2 - The influence of self-grown seed has been studied on thermoelectric performance of 2% Al-doped ZnO(AZO) thin films. The thickness and orientation of c-axis domains in seed layer change on different substrates while other deposition conditions were kept unchanged for a comparable study. The changes occur because of the different nucleation process of thin film growth on substrate interface and the different lattice mismatch between AZO and substrate. Thin films are grown by pulsed laser deposition on single crystals (SrTiO3 (STO) and Al2O3) and cheap amorphous fused silica (FS) substrates at 400 °C. All thin films are c axis oriented. The grains are highly connected and elongated in shapewhich leads to high thermoelectric properties. The thicker self-grown seed layer is found in thin film deposited on FS substrates which shows best performance: electrical conductivity s=93 S/cm and Seebeck coefficient S=-203 μV/K, which estimate power factor (S2.σ) about 0.37 × 10-3Wm-1K-2 at 600 K.The value of thermal conductivity (k) was found lowest (4.89Wm-1K-1) for thin film deposited on FS than the other thin films (6.9Wm-1K-1 on Al2O3 and 6.55Wm-1K-1 on STO) at 300 K. The figure ofmerit, ZT=S2.σ.T/κ, is calculated 0.046 at 600 K, 5 times larger than the ZT of our previous reported bulk AZO,which is promising for practical applications of thermoelectric oxide thin films.
AB - The influence of self-grown seed has been studied on thermoelectric performance of 2% Al-doped ZnO(AZO) thin films. The thickness and orientation of c-axis domains in seed layer change on different substrates while other deposition conditions were kept unchanged for a comparable study. The changes occur because of the different nucleation process of thin film growth on substrate interface and the different lattice mismatch between AZO and substrate. Thin films are grown by pulsed laser deposition on single crystals (SrTiO3 (STO) and Al2O3) and cheap amorphous fused silica (FS) substrates at 400 °C. All thin films are c axis oriented. The grains are highly connected and elongated in shapewhich leads to high thermoelectric properties. The thicker self-grown seed layer is found in thin film deposited on FS substrates which shows best performance: electrical conductivity s=93 S/cm and Seebeck coefficient S=-203 μV/K, which estimate power factor (S2.σ) about 0.37 × 10-3Wm-1K-2 at 600 K.The value of thermal conductivity (k) was found lowest (4.89Wm-1K-1) for thin film deposited on FS than the other thin films (6.9Wm-1K-1 on Al2O3 and 6.55Wm-1K-1 on STO) at 300 K. The figure ofmerit, ZT=S2.σ.T/κ, is calculated 0.046 at 600 K, 5 times larger than the ZT of our previous reported bulk AZO,which is promising for practical applications of thermoelectric oxide thin films.
KW - Al-doped ZnO thin films
KW - c-axis orientation
KW - Figure of merit
KW - High temperature applications
KW - Pulsed laser deposition
KW - Seebeck coefficient
KW - Self-grown seed layer
KW - Thermoelectric oxides
UR - http://www.scopus.com/inward/record.url?scp=84951753011&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84951753011&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2015.09.060
DO - 10.1016/j.tsf.2015.09.060
M3 - Article
AN - SCOPUS:84951753011
VL - 605
SP - 289
EP - 294
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -