抄録
We have investigated the effect of a temperature change on photoresist critical dimension (CD) in a wafer during puddle development. The wafer temperature was decreased by the evaporation latent heat of developer solution during puddle development, and the rate of temperature decrease of the peripheral area was higher than that of the central area in the wafer. The temperature of the peripheral area was approximately 1.3°C lower than that of the central area after 60 s. The temperature distribution was caused by the difference in heat capacitance in the wafer, which was mainly influenced by the wafer chuck. We investigated the influence of temperature on photoresist CD in the wafer, using a diazonaphthoquinone (DNQ)/novolac photoresist. Photoresist CD changed with temperature at a rate of approximately 5nm/°C, and the CD of the peripheral area became smaller than that of the central area over time. We can improve the CD distribution by controlling the temperature during puddle development or by using a photoresist with a dissolution rate that is less sensitive to temperature.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 3354-3358 |
| ページ数 | 5 |
| ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| 巻 | 46 |
| 発行部数 | 6 A |
| DOI | |
| 出版物ステータス | Published - 2007 6 6 |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
これを引用
Effect of temperature on photoresist critical dimension during puddle development. / Eto, Hideo; Ito, Yasuhiro; Homma, Tetsuya.
：: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 巻 46, 番号 6 A, 06.06.2007, p. 3354-3358.研究成果: Article
}
TY - JOUR
T1 - Effect of temperature on photoresist critical dimension during puddle development
AU - Eto, Hideo
AU - Ito, Yasuhiro
AU - Homma, Tetsuya
PY - 2007/6/6
Y1 - 2007/6/6
N2 - We have investigated the effect of a temperature change on photoresist critical dimension (CD) in a wafer during puddle development. The wafer temperature was decreased by the evaporation latent heat of developer solution during puddle development, and the rate of temperature decrease of the peripheral area was higher than that of the central area in the wafer. The temperature of the peripheral area was approximately 1.3°C lower than that of the central area after 60 s. The temperature distribution was caused by the difference in heat capacitance in the wafer, which was mainly influenced by the wafer chuck. We investigated the influence of temperature on photoresist CD in the wafer, using a diazonaphthoquinone (DNQ)/novolac photoresist. Photoresist CD changed with temperature at a rate of approximately 5nm/°C, and the CD of the peripheral area became smaller than that of the central area over time. We can improve the CD distribution by controlling the temperature during puddle development or by using a photoresist with a dissolution rate that is less sensitive to temperature.
AB - We have investigated the effect of a temperature change on photoresist critical dimension (CD) in a wafer during puddle development. The wafer temperature was decreased by the evaporation latent heat of developer solution during puddle development, and the rate of temperature decrease of the peripheral area was higher than that of the central area in the wafer. The temperature of the peripheral area was approximately 1.3°C lower than that of the central area after 60 s. The temperature distribution was caused by the difference in heat capacitance in the wafer, which was mainly influenced by the wafer chuck. We investigated the influence of temperature on photoresist CD in the wafer, using a diazonaphthoquinone (DNQ)/novolac photoresist. Photoresist CD changed with temperature at a rate of approximately 5nm/°C, and the CD of the peripheral area became smaller than that of the central area over time. We can improve the CD distribution by controlling the temperature during puddle development or by using a photoresist with a dissolution rate that is less sensitive to temperature.
KW - Critical dimension
KW - Evaporation latent heat
KW - Puddle development
KW - Temperature
UR - http://www.scopus.com/inward/record.url?scp=34547842153&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34547842153&partnerID=8YFLogxK
U2 - 10.1143/JJAP.46.3354
DO - 10.1143/JJAP.46.3354
M3 - Article
AN - SCOPUS:34547842153
VL - 46
SP - 3354
EP - 3358
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6 A
ER -