Effects of acceptors in a Fe-doped buffer layer on breakdown characteristics of AlGaN/GaN high electron mobility transistors with a high-k passivation layer

Yuuki Kawada, Hideyuki Hanawa, Kazushige Horio

研究成果: Article

4 引用 (Scopus)

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We analyze off-state breakdown characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with a Fe-doped buffer layer where a deep acceptor located above the midgap is included. It is shown that by introducing a high-k passivation layer, the breakdown voltage Vbr improves as in a case with an undoped semi-insulating buffer layer. In the Fe-doped case, Vbr becomes a little higher in the case where the passivation layer's relative permittivity er is rather higher when the energy levels determining the Fermi level are set equal in the two buffers. It is also shown that when the energy level of deep acceptor is deeper, Vbr becomes higher in the region where er is high. This occurs because the leakage current via the buffer layer becomes smaller.

元の言語English
記事番号108003
ジャーナルJapanese Journal of Applied Physics
56
発行部数10
DOI
出版物ステータスPublished - 2017 10

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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