Effects of acceptors in a Fe-doped buffer layer on breakdown characteristics of AlGaN/GaN high electron mobility transistors with a high-k passivation layer

Engineering & Materials Science

• Buffer layers 100%
• Electric breakdown 26%
• Electron energy levels 54%
• Fermi level 40%
• High electron mobility transistors 81%
• Leakage currents 25%
• Passivation 85%
• Permittivity 23%

Physics & Astronomy

• breakdown 54%
• buffers 59%
• electrical faults 13%
• energy levels 22%
• high electron mobility transistors 72%
• leakage 11%
• passivity 65%
• permittivity 9%