Effects of annealing temperature on thermoelectric properties of Bi 2 Te 3 films prepared by co-sputtering

Xing Wang, Hongcai He, Ning Wang, Lei Miao

研究成果: Article査読

55 被引用数 (Scopus)

抄録

N-type thermoelectric bismuth telluride (Bi 2 Te 3 ) films were grown on SiO 2 /Si substrates by RF magnetron co-sputtering without intentional substrate heating. The effects of annealing temperature (150-350 C) on surface morphology, crystal structure and thermoelectric properties of the Bi 2 Te 3 films were investigated. Its crystallization was significantly improved by increasing the annealing temperature, giving rise to the enhanced charge carrier mobility. It is found that the optimum of Seebeck coefficient and power factor was about -242 μV/K and 21 μW/K 2 cm, respectively, obtained at the annealing temperature of 300 C.

本文言語English
ページ(範囲)539-542
ページ数4
ジャーナルApplied Surface Science
276
DOI
出版ステータスPublished - 2013 7 1
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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