We analyze AlGaN/GaN HEMTs with a buffer layer where a deep acceptor above the midgap is considered, and studied how the off-state breakdown voltage is influenced by introducing a high-k passivation layer. As a result, it is shown that the breakdown voltage improves as in a case with a deep donor whose energy level is set equal to the acceptor's energy level, and in this case the breakdown voltage becomes a little higher in the region where the relative permittivity of the passivation layer is high. It is also shown that when the deep-acceptor's energy level is deeper, the breakdown voltage becomes higher in the highk region because the buffer leakage current becomes smaller.
|ホスト出版物のタイトル||Informatics, Electronics and Microsystems - TechConnect Briefs 2017|
|出版ステータス||Published - 2017|
|イベント||11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference - Washington, United States|
継続期間: 2017 5月 14 → 2017 5月 17
|Other||11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference|
|Period||17/5/14 → 17/5/17|
ASJC Scopus subject areas