Effects of buffer acceptors on breakdown voltages of AlGaN/GaN HEMTs with a high-k passivation layer

Y. Kawada, H. Hanawa, Kazushige Horio

研究成果: Conference contribution

1 引用 (Scopus)

抜粋

We analyze AlGaN/GaN HEMTs with a buffer layer where a deep acceptor above the midgap is considered, and studied how the off-state breakdown voltage is influenced by introducing a high-k passivation layer. As a result, it is shown that the breakdown voltage improves as in a case with a deep donor whose energy level is set equal to the acceptor's energy level, and in this case the breakdown voltage becomes a little higher in the region where the relative permittivity of the passivation layer is high. It is also shown that when the deep-acceptor's energy level is deeper, the breakdown voltage becomes higher in the highk region because the buffer leakage current becomes smaller.

元の言語English
ホスト出版物のタイトルInformatics, Electronics and Microsystems - TechConnect Briefs 2017
出版者TechConnect
ページ31-34
ページ数4
4
ISBN(電子版)9780998878218
出版物ステータスPublished - 2017
イベント11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference - Washington, United States
継続期間: 2017 5 142017 5 17

Other

Other11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference
United States
Washington
期間17/5/1417/5/17

ASJC Scopus subject areas

  • Fuel Technology
  • Surfaces, Coatings and Films
  • Biotechnology
  • Fluid Flow and Transfer Processes

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  • これを引用

    Kawada, Y., Hanawa, H., & Horio, K. (2017). Effects of buffer acceptors on breakdown voltages of AlGaN/GaN HEMTs with a high-k passivation layer. : Informatics, Electronics and Microsystems - TechConnect Briefs 2017 (巻 4, pp. 31-34). TechConnect.