Effects of buffer leakage current on breakdown characteristics in AlGaN/GaN HEMTs with a high-k passivation layer

Hideyuki Hanawa, Yoshiki Satoh, Kazushige Horio

研究成果: Article査読

5 被引用数 (Scopus)

抄録

A two-dimensional analysis of off-state breakdown characteristics in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer, with the relative permittivity of passivation layer εr as a parameter. The analysis is made with and without impact ionization of carriers to study how the buffer leakage current affects the breakdown performance. It is shown that when εr is low, the breakdown voltage is determined by the impact ionization of carriers, and when εr becomes high, it is determined by the buffer leakage current. This buffer leakage current decreases as εr increases because the electric field at the drain edge of the gate is weakened, and hence the breakdown voltage increases as εr increases. It is also shown that when the gate voltage is more negative, the breakdown voltage in the high εr region becomes higher because the buffer leakage current becomes smaller.

本文言語English
ページ(範囲)96-99
ページ数4
ジャーナルMicroelectronic Engineering
147
DOI
出版ステータスPublished - 2015 11 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

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