A two-dimensional analysis of off-state breakdown characteristics in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer, with the relative permittivity of passivation layer ε<inf>r</inf> as a parameter. The analysis is made with and without impact ionization of carriers to study how the buffer leakage current affects the breakdown performance. It is shown that when ε<inf>r</inf> is low, the breakdown voltage is determined by the impact ionization of carriers, and when ε<inf>r</inf> becomes high, it is determined by the buffer leakage current. This buffer leakage current decreases as ε<inf>r</inf> increases because the electric field at the drain edge of the gate is weakened, and hence the breakdown voltage increases as ε<inf>r</inf> increases. It is also shown that when the gate voltage is more negative, the breakdown voltage in the high ε<inf>r</inf> region becomes higher because the buffer leakage current becomes smaller.
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics