Effects of buffer leakage current on breakdown voltage in AlGaN/GaN HEMTs with a high-k passivation layer

Yoshiki Satoh, Hideyuki Hanawa, Kazushige Horio

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

A two-dimensional analysis of off-state breakdown characteristics in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer, with the relative permittivity of passivation layer ϵr as a parameter. The analysis is made with and without impact ionization of carriers to study how the buffer leakage current affects the breakdown performance. It is shown that when ϵr is low, the breakdown voltage is determined by the impact ionization of carriers, and when ϵr becomes high, it is determined by the buffer leakage current. This buffer leakage current decreases as ϵr increases because the electric field at the drain edge of the gate is weakened, and hence the breakdown voltage increases as ϵr increases. It is also shown that when the gate voltage is more negative, the breakdown voltage in the high ϵr region becomes higher because the buffer leakage current becomes smaller.

本文言語English
ホスト出版物のタイトルEuMIC 2016 - 11th European Microwave Integrated Circuits Conference
出版社Institute of Electrical and Electronics Engineers Inc.
ページ341-344
ページ数4
ISBN(電子版)9782874870446
DOI
出版ステータスPublished - 2016 12 7
イベント11th European Microwave Integrated Circuits Conference, EuMIC 2016 - London, United Kingdom
継続期間: 2016 10 32016 10 4

Other

Other11th European Microwave Integrated Circuits Conference, EuMIC 2016
国/地域United Kingdom
CityLondon
Period16/10/316/10/4

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 器械工学

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