Effects of energy relaxation time on performance of AlGaAs/GaAs heterojunction bipolar transistor

K. Horio

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Numerical simulations of an AlGaAs/GaAs heterojunction bipolar transistor are performed by using an energy transport model. It is found that the energy relaxation time is an important parameter to determine the device performance. A longer energy relaxation time is desirable to achieve a higher cutoff frequency.

本文言語English
ページ(範囲)547-549
ページ数3
ジャーナルElectronics Letters
25
8
DOI
出版ステータスPublished - 1989 1 1

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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