抄録
Numerical simulations of an AlGaAs/GaAs heterojunction bipolar transistor are performed by using an energy transport model. It is found that the energy relaxation time is an important parameter to determine the device performance. A longer energy relaxation time is desirable to achieve a higher cutoff frequency.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 547-549 |
| ページ数 | 3 |
| ジャーナル | Electronics Letters |
| 巻 | 25 |
| 号 | 8 |
| DOI | |
| 出版ステータス | Published - 1989 1月 1 |
ASJC Scopus subject areas
- 電子工学および電気工学