TY - JOUR
T1 - Effects of field plate on buffer trapping in AlGaN/GaN HEMTs
AU - Nakajima, Atsushi
AU - Itagaki, Keiichi
AU - Horio, Kazushige
PY - 2009/12/1
Y1 - 2009/12/1
N2 - Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. It is shown that drain lag is reduced by introducing a field plate, because the buffer-trapping effects are reduced. It is also shown that buffer-related lag phenomena and current collapse are also reduced in the field-plate structure.
AB - Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. It is shown that drain lag is reduced by introducing a field plate, because the buffer-trapping effects are reduced. It is also shown that buffer-related lag phenomena and current collapse are also reduced in the field-plate structure.
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U2 - 10.1002/pssc.200982557
DO - 10.1002/pssc.200982557
M3 - Conference article
AN - SCOPUS:77955442894
VL - 6
SP - 2840
EP - 2842
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1862-6351
IS - 12
T2 - 15th International Semiconducting and Insulating Materials Conference, SIMC-XV
Y2 - 15 June 2009 through 19 June 2009
ER -