Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. It is shown that drain lag is reduced by introducing a field plate, because the buffer-trapping effects are reduced. It is also shown that buffer-related lag phenomena and current collapse are also reduced in the field-plate structure.
|ジャーナル||Physica Status Solidi (C) Current Topics in Solid State Physics|
|出版ステータス||Published - 2009 12 1|
|イベント||15th International Semiconducting and Insulating Materials Conference, SIMC-XV - Vilnius, Lithuania|
継続期間: 2009 6 15 → 2009 6 19
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