抜粋
Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. It is shown that drain lag is reduced by introducing a field plate, because the buffer-trapping effects are reduced. It is also shown that buffer-related lag phenomena and current collapse are also reduced in the field-plate structure.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 2840-2842 |
| ページ数 | 3 |
| ジャーナル | Physica Status Solidi (C) Current Topics in Solid State Physics |
| 巻 | 6 |
| 発行部数 | 12 |
| DOI | |
| 出版物ステータス | Published - 2009 12 1 |
| イベント | 15th International Semiconducting and Insulating Materials Conference, SIMC-XV - Vilnius, Lithuania 継続期間: 2009 6 15 → 2009 6 19 |
ASJC Scopus subject areas
- Condensed Matter Physics
フィンガープリント Effects of field plate on buffer trapping in AlGaN/GaN HEMTs' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Nakajima, A., Itagaki, K., & Horio, K. (2009). Effects of field plate on buffer trapping in AlGaN/GaN HEMTs. Physica Status Solidi (C) Current Topics in Solid State Physics, 6(12), 2840-2842. https://doi.org/10.1002/pssc.200982557