Effects of field plate on buffer trapping in AlGaN/GaN HEMTs

Atsushi Nakajima, Keiichi Itagaki, Kazushige Horio

研究成果: Article

3 引用 (Scopus)

抄録

Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. It is shown that drain lag is reduced by introducing a field plate, because the buffer-trapping effects are reduced. It is also shown that buffer-related lag phenomena and current collapse are also reduced in the field-plate structure.

元の言語English
ページ（範囲）2840-2842
ページ数3
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
巻6
発行部数12
DOI
出版物ステータスPublished - 2009

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high electron mobility transistors
buffers
trapping
time lag

ASJC Scopus subject areas

  • Condensed Matter Physics

これを引用

Effects of field plate on buffer trapping in AlGaN/GaN HEMTs. / Nakajima, Atsushi; Itagaki, Keiichi; Horio, Kazushige.

：: Physica Status Solidi (C) Current Topics in Solid State Physics, 巻 6, 番号 12, 2009, p. 2840-2842.

研究成果: Article

Nakajima, A, Itagaki, K & Horio, K 2009, 'Effects of field plate on buffer trapping in AlGaN/GaN HEMTs', Physica Status Solidi (C) Current Topics in Solid State Physics, 巻. 6, 番号 12, pp. 2840-2842. https://doi.org/10.1002/pssc.200982557
Nakajima A, Itagaki K, Horio K. Effects of field plate on buffer trapping in AlGaN/GaN HEMTs. Physica Status Solidi (C) Current Topics in Solid State Physics. 2009;6(12):2840-2842. https://doi.org/10.1002/pssc.200982557
Nakajima, Atsushi ; Itagaki, Keiichi ; Horio, Kazushige. / Effects of field plate on buffer trapping in AlGaN/GaN HEMTs. ：: Physica Status Solidi (C) Current Topics in Solid State Physics. 2009 ; 巻 6, 番号 12. pp. 2840-2842.
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