Effects of field plate on buffer trapping in AlGaN/GaN HEMTs

Atsushi Nakajima, Keiichi Itagaki, Kazushige Horio

研究成果: Conference article

3 引用 (Scopus)

抜粋

Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. It is shown that drain lag is reduced by introducing a field plate, because the buffer-trapping effects are reduced. It is also shown that buffer-related lag phenomena and current collapse are also reduced in the field-plate structure.

元の言語English
ページ(範囲)2840-2842
ページ数3
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
6
発行部数12
DOI
出版物ステータスPublished - 2009 12 1
イベント15th International Semiconducting and Insulating Materials Conference, SIMC-XV - Vilnius, Lithuania
継続期間: 2009 6 152009 6 19

ASJC Scopus subject areas

  • Condensed Matter Physics

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