Effects of Impact Ionization on I-V Characteristics of GaAs n-i-n Structures Including Hole Trap

Kazushige Horio, Hiroyuki Kusuki

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Numerical simulations of GaAs n-i-n structures with Cr deep acceptors (hole trap) in the i-layer are performed by considering the impact ionization of carriers. At low voltages, I-V curves show sublinear or saturated features, because the voltage is entirely applied along the reverse-biased n-i junction. When the deep-acceptor density is low, a steep rise of current occurs due to trap filling, while when the deep-acceptor density becomes high, the steep current rise occurs due to impact ionization of carriers at the reverse-biased n-i junction. In this case, the voltage for current rise becomes lower as the acceptor density becomes higher.

本文言語English
ページ(範囲)541-543
ページ数3
ジャーナルIEEE Electron Device Letters
13
10
DOI
出版ステータスPublished - 1992 10

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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