EFFECTS OF IMPURITY COMPENSATION ON I-V CHARACTERISTICS OF N-I-N STRUCTURES AND BACKGATING IN GAAS INTEGRATED CIRCUITS.

K. Horio, T. Ikoma, H. Yanai

研究成果: Conference contribution

2 引用 (Scopus)

抜粋

It is found that an effective resistivity in the low voltage region depends on acceptor and trap densities and the length of the i-layer. To achieve good isolation between two devices in GaAs ICs, it is suggested that the shallow acceptor density as well as the trap density must be larger than a critical value. An analytical model has been presented to estimate the effective resistivity and the onset voltage of current rise. The backgating effect has also been analyzed in terms of a separation distance and an acceptor density.

元の言語English
ホスト出版物のタイトルUnknown Host Publication Title
編集者David C. Look, John S. Blakemore
出版者Shiva Publ Ltd, Nantwich, Engl Also
ページ354-363
ページ数10
ISBN(印刷物)1850140316
出版物ステータスPublished - 1984 12 1

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    Horio, K., Ikoma, T., & Yanai, H. (1984). EFFECTS OF IMPURITY COMPENSATION ON I-V CHARACTERISTICS OF N-I-N STRUCTURES AND BACKGATING IN GAAS INTEGRATED CIRCUITS. : D. C. Look, & J. S. Blakemore (版), Unknown Host Publication Title (pp. 354-363). Shiva Publ Ltd, Nantwich, Engl Also.