抄録
Schottky diodes with Ni-Ti-Pt-Au Schottky electrodes on AlGaN-GaN heterostructures were fabricated and subjected to rapid thermal annealing. The electrical influence on them was investigated in terms of the existence of a thin Ni or Ti layer. The diodes of the Ni-Pt-Au system showed a drastic improvement in their electrical properties, such as an increase in the Schottky barrier height and a decrease in the leakage current, after the 600°C treatment whereas the thermal annealing effect was found to be small in the Ti-Pt-Au and the Pt-Au systems. The Ni was considered to play a significant role in realizing a clean Pt contact to AlGaN and reducing surface traps, which were revealed from Auger electron spectroscopy measurement and frequency-dependent capacitance-voltage measurement, respectively. The thermally-treated Ni-Pt-Au gate electrode was concluded to be practicable for realizing high performance HEMTs.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 297-303 |
| ページ数 | 7 |
| ジャーナル | IEEE Transactions on Electron Devices |
| 巻 | 51 |
| 号 | 3 |
| DOI | |
| 出版ステータス | Published - 2004 3 1 |
| 外部発表 | はい |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering