Effects of junctions on conduction properties of GaAs n-i-n structures including deep levels

K. Horio, H. Yanai

研究成果: Review article査読

抄録

I-V characteristics of GaAs n-i-n structures are calculated by considering impact ionization of carriers. Impact ionization at reverse-biased n-i junction becomes a cause of steep current rise when an acceptor density in the i-layer is high. It is shown that an optimum acceptor density exists to keep a good isolation. Photoconduction transients of GaAs n-i-n structures are also simulated, and are shown to be strongly affected by existence of n-i junctions.

本文言語English
ページ(範囲)563-572
ページ数10
ジャーナルCOMPEL - The international journal for computation and mathematics in electrical and electronic engineering
10
4
DOI
出版ステータスPublished - 1991 4 1

ASJC Scopus subject areas

  • Computer Science Applications
  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering
  • Applied Mathematics

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