I-V characteristics of GaAs n-i-n structures are calculated by considering impact ionization of carriers. Impact ionization at reverse-biased n-i junction becomes a cause of steep current rise when an acceptor density in the i-layer is high. It is shown that an optimum acceptor density exists to keep a good isolation. Photoconduction transients of GaAs n-i-n structures are also simulated, and are shown to be strongly affected by existence of n-i junctions.
|ジャーナル||COMPEL - The international journal for computation and mathematics in electrical and electronic engineering|
|出版ステータス||Published - 1991 4月 1|
ASJC Scopus subject areas
- コンピュータ サイエンスの応用