TY - JOUR
T1 - Effects of RTA cover material on the properties of GaNAs/GaAs triple quantum wells grown by chemical beam epitaxy
AU - Sun, Yijun
AU - Yamamori, Masayuki
AU - Egawa, Takashi
AU - Ishikawa, Hiroyasu
AU - Mito, Kazuya
N1 - Funding Information:
We would like to acknowledge the financial support from the NITECH 21st Century COE Program (World Ceramics Center for Environmental Harmony).
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2004/9/1
Y1 - 2004/9/1
N2 - Effects of rapid-thermal-annealing (RTA) cover material on the properties of GaNAs/GaAs triple quantum wells (QWs) grown by chemical beam epitaxy (CBE) are studied in detail. Si wafer, GaAs wafer, and GaAs layer grown on GaAs substrate at low temperature are used as RTA cover materials. The results show that RTA cover material exerts significant influence on the properties of the QWs. The QWs using GaAs layer show not only the lower root mean square (RMS) roughness of sample surface but also the lower photoluminescence linewidth compared with those using GaAs wafer and Si wafer. The best RTA cover material is neither GaAs wafer nor Si wafer. The best RTA cover material is GaAs layer grown at low temperature from the viewpoints of both surface morphology and optical properties. The results obtained in this work are helpful for quality improvement of (In)GaNAs using RTA.
AB - Effects of rapid-thermal-annealing (RTA) cover material on the properties of GaNAs/GaAs triple quantum wells (QWs) grown by chemical beam epitaxy (CBE) are studied in detail. Si wafer, GaAs wafer, and GaAs layer grown on GaAs substrate at low temperature are used as RTA cover materials. The results show that RTA cover material exerts significant influence on the properties of the QWs. The QWs using GaAs layer show not only the lower root mean square (RMS) roughness of sample surface but also the lower photoluminescence linewidth compared with those using GaAs wafer and Si wafer. The best RTA cover material is neither GaAs wafer nor Si wafer. The best RTA cover material is GaAs layer grown at low temperature from the viewpoints of both surface morphology and optical properties. The results obtained in this work are helpful for quality improvement of (In)GaNAs using RTA.
KW - A1. Cover material
KW - A1. Rapid thermal annealing
KW - A3. Chemical beam epitaxy
KW - A3. Quantum wells
KW - B1. GaNAs
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U2 - 10.1016/j.jcrysgro.2004.05.060
DO - 10.1016/j.jcrysgro.2004.05.060
M3 - Article
AN - SCOPUS:4344593833
SN - 0022-0248
VL - 269
SP - 229
EP - 234
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 2-4
ER -