EFfects of semi-insulating substrate on kink phenomena in GaAs MESFETs

K. Horio, K. Satoh

研究成果: Paper

2 引用 (Scopus)

抜粋

Two-dimensional simulation of GaAs MESFETs with perfectly insulating substrate is made, and the results are compared with those for a case with more realistic semi-insulating substrate into which carriers can be injected. It is shown that the kink or sub-breakdown is explained by impact ionization of holes and the following hole trapping or hole accumulation in the semi-insulating substrate rather than by direct gate breakdown.

元の言語English
ページ353-356
ページ数4
出版物ステータスPublished - 1996 12 1
イベントProceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 - Toulouse, Fr
継続期間: 1996 4 291996 5 3

Other

OtherProceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9
Toulouse, Fr
期間96/4/2996/5/3

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    Horio, K., & Satoh, K. (1996). EFfects of semi-insulating substrate on kink phenomena in GaAs MESFETs. 353-356. 論文発表場所 Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9, Toulouse, Fr, .